Analysis of Charge Transport, Joseph W. Jerome

Автор: T. W. Anderson
Название: An Introduction to Multivariate Statistical Analysis, Third Edition
ISBN: 0471360910 ISBN-13(EAN): 9780471360919
Издательство: Wiley
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Цена: 184750.00 T
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Описание: Uses the method of maximum likelihood to a large extent to ensure reasonable, and in some cases optimal procedures. This work treats the basic and important topics in multivariate statistics.

Автор: Ok, E.
Название: Real analysis with economic applications
ISBN: 0691117683 ISBN-13(EAN): 9780691117683
Издательство: Wiley
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Цена: 115110.00 T
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Описание: Addressing the topics of real analysis, this book discusses the elements of order theory, convex analysis, optimization, correspondences, linear and nonlinear functional analysis, fixed-point theory, dynamic programming, and calculus of variations. It includes fixed point theorems and applications to functional equations and optimization theory.

Автор: Dinh Van Tuan
Название: Charge and Spin Transport in Disordered Graphene-Based Materials
ISBN: 331925569X ISBN-13(EAN): 9783319255699
Издательство: Springer
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Цена: 95770.00 T
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Описание: Introduction.- Electronic and Transport Properties of Graphene.- The Real Space Order O(N) Transport Formalism.- Transport in Disordered Graphene.- Spin Transport in Disordered Graphene.- Conclusions.

Автор: Takuro Sato
Название: Transport and NMR Studies of Charge Glass in Organic Conductors with Quasi-triangular Lattices
ISBN: 9811058784 ISBN-13(EAN): 9789811058783
Издательство: Springer
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Цена: 102480.00 T
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Описание: It focuses on quasi-two-dimensional organic conductors of the ГЋВё-(BEDT-TTF)2X family, which form anisotropic triangular lattices, and examines their electronic properties using various measurements: resistivity, time-resolved electric transport, X-ray diffraction analysis, and nuclear magnetic resonance spectroscopy.

Автор: Shuai
Название: Theory of Charge Transport in Carbon Electronic Materials
ISBN: 3642250750 ISBN-13(EAN): 9783642250750
Издательство: Springer
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Цена: 47880.00 T
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Описание: Mechanism of charge transport in organic solids has been an issue of intensive interests and debates for over 50 years, not only because of the applications in printing electronics, but also because of the great challenges in understanding the electronic processes in complex systems. With the fast developments of both electronic structure theory and the computational technology, the dream of predicting the charge mobility is now gradually becoming a reality. This volume describes recent progresses in Prof. Shuai’s group in developing computational tools to assess the intrinsic carrier mobility for organic and carbon materials at the first-principles level. According to the electron-phonon coupling strength, the charge transport mechanism is classified into three different categories, namely, the localized hopping model, the extended band model, and the polaron model. For each of them, a corresponding theoretical approach is developed and implemented into typical examples.

Автор: Dinh Van Tuan
Название: Charge and Spin Transport in Disordered Graphene-Based Materials
ISBN: 3319370545 ISBN-13(EAN): 9783319370545
Издательство: Springer
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Цена: 78350.00 T
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Описание: Introduction.- Electronic and Transport Properties of Graphene.- The Real Space Order O(N) Transport Formalism.- Transport in Disordered Graphene.- Spin Transport in Disordered Graphene.- Conclusions.

Автор: Brown Robert F.
Название: A Topological Introduction to Nonlinear Analysis
ISBN: 0817632581 ISBN-13(EAN): 9780817632588
Издательство: Springer
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Цена: 41880.00 T
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Описание: "The book is highly recommended as a text for an introductory course in nonlinear analysis and bifurcation theory . . . reading is fluid and very pleasant . . . style is informal but far from being imprecise." —MATHEMATICAL REVIEWS (Review of the First Edition) Here is a book that will be a joy to the mathematician or graduate student of mathematics---or even the well-prepared undergraduate---who would like, with a minimum of background and preparation, to understand some of the beautiful results at the heart of nonlinear analysis. Based on carefully expounded ideas from several branches of topology, and illustrated by a wealth of figures that attest to the geometric nature of the exposition, the book will be of immense help in providing its readers with an understanding of the mathematics of the nonlinear phenomena that characterize our real world.New to the second edition: New chapters will supply additional applications of the theory and techniques presented in the book. * Several new proofs, making the second edition more self-contained.

Автор: Bartle
Название: Introduction to Real Analysis, 4th Edition
ISBN: 0471433314 ISBN-13(EAN): 9780471433316
Издательство: Wiley
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Цена: 218540.00 T
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Описание: * Helps one develop the ability to think deductively, analyse mathematical situations and extend ideas to a new context. * Maintains the same spirit and user-friendly approach with addition examples and expansion on Logical Operations and Set Theory.

Автор: Ruey S. Tsay
Название: Multivariate Time Series Analysis: With R and Financial Applications
ISBN: 1118617908 ISBN-13(EAN): 9781118617908
Издательство: Wiley
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Цена: 125610.00 T
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Описание: An accessible guide to the multivariate time series tools used in numerous real-world applications Multivariate Time Series Analysis: With R and Financial Applications is the much anticipated sequel coming from one of the most influential and prominent experts on the topic of time series.

Автор: Guillermo Sapiro
Название: Geometric Partial Differential Equations and Image Analysis
ISBN: 0521685079 ISBN-13(EAN): 9780521685078
Издательство: Cambridge Academ
Цена: 53850.00 T
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Описание: Researchers and practitioners will be able to achieve state-of-the-art practical results in a large number of real problems with the techniques described here. Applications covered include image segmentation, shape analysis, image enhancement, and tracking.

Автор: Neamen Donald A
Название: Microelectronics Circuit Analysis and Design
ISBN: 007128947X ISBN-13(EAN): 9780071289474
Издательство: McGraw-Hill
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Цена: 65190.00 T
Наличие на складе: Невозможна поставка.
Описание: Microelectronics Circuit Analysis and Design is intended as a core text in electronics for undergraduate electrical and computer engineering students. The fourth edition continues to provide a foundation for analyzing and designing both analog and digital electronic circuits. The goal has always been to make this book very readable and student friendly.

Автор: Wai Kin Chim
Название: Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
ISBN: 047149240X ISBN-13(EAN): 9780471492405
Издательство: Wiley
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Цена: 204810.00 T
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Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.