Transmission Electron Microscopy and Diffractometry of Materials, Brent Fultz; James Howe

Автор: David B. Williams; C. Barry Carter
Название: Transmission Electron Microscopy
ISBN: 038776500X ISBN-13(EAN): 9780387765006
Издательство: Springer
Рейтинг:
Цена: 93130.00 T
Наличие на складе: Невозможна поставка.
Описание: Illustrated in color, this work offers the necessary instructions for successful hands-on application of this versatile materials characterization technique. It also includes an extensive collection of questions for the student, providing approximately 800 self-assessment questions and over 400 questions that are suitable for homework assignment.

Автор: Dai-Ming Tang
Название: In Situ Transmission Electron Microscopy Studies of Carbon Nanotube Nucleation Mechanism and Carbon Nanotube-Clamped Metal Atomic Chains
ISBN: 3642372589 ISBN-13(EAN): 9783642372582
Издательство: Springer
Рейтинг:
Цена: 102480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes real-time observation and atomic level monitoring and machining using an in situ transmission electron microscopy (TEM) approach to investigate growth of carbon nanotubes and fabrication and properties of CNT-clamped metal atomic chains.

Автор: Ludwig Reimer; P.W. Hawkes; C. Deininger; R.F. Ege
Название: Energy-Filtering Transmission Electron Microscopy
ISBN: 3662140551 ISBN-13(EAN): 9783662140550
Издательство: Springer
Рейтинг:
Цена: 87070.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Energy-Filtering Transmission Electron Microscopy (EFTEM) presents a summary of the electron optics, the electron-specimen interactions, and the operation and contrast modes of this new field of analytical electron microscopy.

Автор: Andreas Rosenauer
Название: Transmission Electron Microscopy of Semiconductor Nanostructures
ISBN: 3662146185 ISBN-13(EAN): 9783662146187
Издательство: Springer
Рейтинг:
Цена: 87070.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides tools well suited for thequantitative investigation of semiconductor electron microscopy. The bookfocuses on new methods including strain stateanalysis as well as evaluation of the compositionvia the lattice fringe analysis (CELFA) technique.