Electrical Characterization of Silicon-on-Insulator Materials and Devices, Sorin Cristoloveanu; Sheng Li

Автор: Denis Flandre; Alexei N. Nazarov; Peter L.F. Hemme
Название: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
ISBN: 1402030118 ISBN-13(EAN): 9781402030116
Издательство: Springer
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Описание: Collects the papers presented during NATO Advanced Research Workshop `Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment` held in Kiev 26-30 April 2004. This volume contains both reviews from invited speakers and selected papers presenting innovations in SOI materials and devices.

Автор: Peter L.F. Hemment; Vladimir S. Lysenko; Alexei N.
Название: Perspectives, Science and Technologies for Novel Silicon on Insulator Devices
ISBN: 0792361172 ISBN-13(EAN): 9780792361176
Издательство: Springer
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Описание: Contains the key papers presented during the International NATO Advanced Research Workshop on Silicon on Insulator device technologies. This book explores issues ranging from the economic aspects incorporating SOI and related materials into circuits and systems to consideration of low temperature electronics, quantum devices and MEMS.

Автор: Jinsong Zhang
Название: Transport Studies of the Electrical, Magnetic and Thermoelectric properties of Topological Insulator Thin Films
ISBN: 3662499258 ISBN-13(EAN): 9783662499252
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Описание: This book presentsthe transport studies of topological insulator thin films grown by molecularbeam epitaxy. Through band structure engineering, the ideal topologicalinsulators, (Bi1ГЇВїВЅ xSbx)2Te3 ternary alloys, are successfully fabricated, whichpossess truly insulating bulk and tunable conducting surface states.

Автор: Sorin Cristoloveanu; Sheng Li
Название: Electrical Characterization of Silicon-on-Insulator Materials and Devices
ISBN: 0792395484 ISBN-13(EAN): 9780792395485
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Описание: Describes a variety of electrical characterization methods, from wafer screening and defect identification to detailed device evaluation. This book provides a comprehensive treatment of different aspects of SOI technologies, including material synthesis, device physics, characterization, circuit applications, and reliability issues.

Автор: J.-P. Colinge
Название: Silicon-on-Insulator Technology: Materials to VLSI
ISBN: 1461347955 ISBN-13(EAN): 9781461347958
Издательство: Springer
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Описание: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years.

Автор: Alexei Nazarov; J.-P. Colinge; Francis Balestra; J
Название: Semiconductor-On-Insulator Materials for Nanoelectronics Applications
ISBN: 3642267084 ISBN-13(EAN): 9783642267086
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Описание: Devoted to the evolving field of modern nanoelectronics, this volume presents the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. Topics include new semiconductor-on-insulator materials, physics of modern SemOI devices, and MEMS on SOI.

Автор: J.-P. Colinge
Название: Silicon-on-Insulator Technology
ISBN: 079238007X ISBN-13(EAN): 9780792380078
Издательство: Springer
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Описание: Describes the different facets of Silicon-on-Insulator technology. This title presents a review of SOI materials, devices and circuits. It discusses SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits.

Автор: Denis Flandre; Alexei Nazarov; Peter L.F. Hemment
Название: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
ISBN: 1402030126 ISBN-13(EAN): 9781402030123
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Описание: Collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment". Presenting various innovations in SOI materials and devices, the papers focus on the reliability of SOI structures operating under harsh conditions.

Автор: S. Furukawa
Название: Silicon-on-Insulator
ISBN: 9401088462 ISBN-13(EAN): 9789401088466
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Описание: This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983.

Автор: J.-P. Colinge
Название: Silicon-on-Insulator Technology
ISBN: 0792391500 ISBN-13(EAN): 9780792391500
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Описание: Explains the principles and the physics of SOI materials fabrication and characterization, SOI processing SOI MOSFET device physics, and the use of SOI material in novel device design. The performances of SOI circuits for VLSI/ULSI and for niche applications are also described.

Автор: Hellmut Fritzche
Название: Localization and Metal-Insulator Transitions
ISBN: 1461295211 ISBN-13(EAN): 9781461295211
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Описание: This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday.

Автор: J.-P. Colinge
Название: Silicon-on-Insulator Technology
ISBN: 1475721234 ISBN-13(EAN): 9781475721232
Издательство: Springer
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Описание: 5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .