Physics of p-n Junctions and Semiconductor Devices, S. M. Ryvkin

Автор: Fausto Rossi
Название: Theory of Semiconductor Quantum Devices
ISBN: 3642266819 ISBN-13(EAN): 9783642266812
Издательство: Springer
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Цена: 148010.00 T
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Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectric nanodevices, including quantum-cascade laser sources and detectors, few-electron/exiton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Автор: Carl Wilmsen
Название: Physics and Chemistry of III-V Compound Semiconductor Interfaces
ISBN: 1468448374 ISBN-13(EAN): 9781468448375
Издательство: Springer
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Цена: 87070.00 T
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Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.

Автор: V.Ya. Frenkel; V.M. Tuchkevich
Название: Semiconductor Physics
ISBN: 1461578426 ISBN-13(EAN): 9781461578420
Издательство: Springer
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Цена: 104480.00 T
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Описание: I am happy indeed to write a foreword to this book. Since it was founded, the A. F. Ioffe Institute in Leningrad has been in the forefront of semiconductor research. I visited it in 1934, and vividly remember A -. F. Ioffe himself and J. Frenkel and their kindness to me, and to others attending the meeting to celebrate the hundredth anniversary of Mendeleev. In the last years my own work on non-crystalline semiconductors has been strongly influenced by the work of B. T. Kolomiets and his co-workers. The English-speaking world should know the great Institute better, and this book will, I am sure, help this to happen. Nevill Mott Cambridge, June 1985 v Contents INTRODUCTORY PART Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960) 3 V. M. Tuchkevich and V. Ya. Frenkel Semiconductors: A New Material for Electrical Engineering 11 A. F. Ioffe EXPERIMENTAL PART Photovoltaic Solar Energy Conversion 19 Zh. 1. Alferov New Optical Methods in Semiconductor Research 37 B. P. Zakharchenya Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3BS Semiconductors and Heterostructures 53 D. Z. Garbuzov Interacting Excitons in Germanium and Silicon 87 P. D. Altukhov, V. M. Asnin and A. A. Rogachev Liquid Semiconductors 129 A. R. Regel and A. A. Andreev Chalcogenide Vitreous Semiconductors 143 B. T. Kolomiets, E. A. Lebedev, V. M. Lyubin, T. F. Mazets and T. N. Mamontova vii viii CONTENTS Electron and Hole Recombination in Narrow Gap Semiconductors 169 B. L. Gelmont and V. I.