Variation-Aware Adaptive Voltage Scaling for Digital CMOS Circuits, Martin Wirnshofer

Автор: Meyvaert
Название: High-Ratio Voltage Conversion in CMOS for Efficient Mains-Connected Standby
ISBN: 3319312065 ISBN-13(EAN): 9783319312064
Издательство: Springer
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Цена: 107130.00 T
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Описание: This book describes synergetic innovation opportunities offered by combining the field of power conversion with the field of integrated circuit (IC) design. The authors demonstrate how integrating circuits enables increased operation frequency, which can be exploited in power converters to reduce drastically the size of the discrete passive components. The authors introduce multiple power converter circuits, which are very compact as result of their high level of integration. First, the limits of high-power-density low-voltage monolithic switched-capacitor DC-DC conversion are investigated to enable on-chip power granularization. AC-DC conversion from the mains to a low voltage DC is discussed, enabling an efficient and compact, lower-power auxiliary power supply to take over the power delivery during the standby mode of mains-connected appliances, allowing the main power converter of these devices to be shut down fully.

Автор: Michael Fulde
Название: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
ISBN: 9048132797 ISBN-13(EAN): 9789048132799
Издательство: Springer
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Цена: 130610.00 T
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Описание: This book offers a technology-oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Coverage includes transient threshold voltage variations and integration of tunnel transistors in a multi-gage process.

Автор: Pui-In Mak; Rui Paulo Martins
Название: High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS
ISBN: 1489992200 ISBN-13(EAN): 9781489992208
Издательство: Springer
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Цена: 121110.00 T
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Описание: This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. It includes novel high-/mixed-voltage analog and RF circuit techniques.