SiGe-based Re-engineering of Electronic Warfare Subsystems, Wynand Lambrechts; Saurabh Sinha

Название: Sige-Based Re-Engineering of Electronic Warfare Subsystems
ISBN: 3319837281 ISBN-13(EAN): 9783319837284
Издательство: Springer
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Цена: 93160.00 T
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Описание: This book provides readers a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for electronic warfare and defensive countermeasures in military contexts.

Автор: Qizheng Gu
Название: RF Tunable Devices and Subsystems: Methods of Modeling, Analysis, and Applications
ISBN: 331909923X ISBN-13(EAN): 9783319099231
Издательство: Springer
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Цена: 121890.00 T
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Описание: This book serves as a hands-on guide to RF tunable devices, circuits and subsystems. An innovative of modeling for tunable devices and networks is described, along with a new tuning algorithm, adaptive matching network control approach, and novel filter frequency automatic control loop.

Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou
Название: Poly-SiGe for MEMS-above-CMOS Sensors
ISBN: 9401781400 ISBN-13(EAN): 9789401781404
Издательство: Springer
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Цена: 87060.00 T
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Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.

Автор: Yabin Sun
Название: Research on the Radiation Effects and Compact Model of SiGe HBT
ISBN: 9811046115 ISBN-13(EAN): 9789811046117
Издательство: Springer
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Цена: 121110.00 T
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Описание: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).

Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou
Название: Poly-SiGe for MEMS-above-CMOS Sensors
ISBN: 9400767986 ISBN-13(EAN): 9789400767980
Издательство: Springer
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Цена: 111790.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.

Автор: Jacopo Franco; Ben Kaczer; Guido Groeseneken
Название: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
ISBN: 9400776624 ISBN-13(EAN): 9789400776623
Издательство: Springer
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Цена: 111790.00 T
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Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Автор: Shiraki Yasuhiro, Usami Noritaka, Shiraki Y.
Название: Silicon-Germanium (Sige) Nanostructures: Production, Properties and Applications in Electronics
ISBN: 0081017391 ISBN-13(EAN): 9780081017395
Издательство: Elsevier Science
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Цена: 202120.00 T
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Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.