Micheloni, Rino 3D Flash Memories 9789401775106

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Автор: Micheloni, Rino
Название: 3D Flash Memories
Перевод названия: Рино Михелони: Устройства памяти 3D Flash
ISBN: 9789401775106
Издательство: Springer
Классификация:

Электроника

Схемы и компоненты

Накопители и периферийные устройства

ISBN-10: 9401775109
Обложка/Формат: Hardback
Страницы: 200
Вес: 0.82 кг.
Дата издания: 24.05.2016
Язык: English
Издание: 1st ed. 2016
Иллюстрации: 300 tables, color; 304 illustrations, color; 92 illustrations, black and white; xxii, 380 p. 396 illus., 304 illus. in color.
Размер: 23.37 x 15.75 x 2.79 cm
Читательская аудитория: General (us: trade)
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book walks the reader through the next step in the evolution ofNAND flash memory technology, namely the development of 3D flash memories, inwhich multiple layers of memory cells are grown within the same piece ofsilicon. It describes their workingprinciples, device architectures, fabrication techniques and practicalimplementations, and highlights why 3D flash is a brand new technology.After reviewing market trends for both NAND and solid state drives(SSDs), the book digs into the details of the flash memory cell itself,covering both floating gate and emerging charge trap technologies. There is aplethora of different materials and vertical integration schemes out there. Newmemory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3DFG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer hasits own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D canmaterialize. The 3D wave is impacting emerging memories as well and chapter 8covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures canbe a challenge for the human brain: this is way all these chapters contain alot of bird’s-eye views and cross sections along the 3 axes.The second part of the book is devoted to other important aspects, suchas advanced packaging technology (i.e. TSV in chapter 9) and error correctioncodes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution fromlegacy BCH to the most recent LDPC codes, while chapter 11 deals with some ofthe most recent advancements in the ECC field. Last but not least, chapter 12looks at 3D flash memories from a system perspective.Is 14nm the last step for planar cells? Can 100 layers be integratedwithin the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D bereliable enough for enterprise and datacenter applications? These are some ofthe questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
Дополнительное описание: Dedication Page.- Foreword.- Preface.-Introduction.- About the Editor.- Acknowledgements.- 1 The Business of NAND.- 2Reliability of 3D NAND Flash memories.- 3 3D Stacked NAND Flash memories.- 4 3DCharge Trap NAND Flash memories.- 5 3D Floating Gate NAND F

3D Flash Memories, Micheloni, Rino